2012-01-31 Breakdown voltage in very thin gate oxides has been tested

The study addresses statistical properties of low-frequency-noise of ultrathin tunnel junctions based on oxide thickness in the range between 2.5 nm and 4 nm. The capacitor tested is formed by a metal and a semiconductor separated by the oxide. Non-Gaussian distributions of the noise have been found. The steady revealed also strong peaks in the distributions, which indicate the appearance
of new paths along which a percolation occurs. The devices with the thinnest oxide withstand voltage up to 9 V, which corresponds to an electric field of 3.6 GV/m. This estimate is true only if the semiconductor electrode is strongly doped and is a good conductor, so that charges accumulate on its surface only.

Breakdown voltage in very thin gate oxides has been tested

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