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TODAY DECEMBER 12, 2018
2012-01-31

Breakdown voltage in very thin gate oxides has been tested

Breakdown voltage in very thin gate oxides has been tested
Breakdown voltage in very thin gate oxides has been tested

The study addresses statistical properties of low-frequency-noise of ultrathin tunnel junctions based on oxide thickness in the range between 2.5 nm and 4 nm. The capacitor tested is formed by a metal and a semiconductor separated by the oxide. Non-Gaussian distributions of the noise have been found. The steady revealed also strong peaks in the distributions, which indicate the appearance
of new paths along which a percolation occurs. The devices with the thinnest oxide withstand voltage up to 9 V, which corresponds to an electric field of 3.6 GV/m. This estimate is true only if the semiconductor electrode is strongly doped and is a good conductor, so that charges accumulate on its surface only.
Source: ArXive


Breakdown voltage in very thin gate oxides has been tested

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