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Ni-Graphene-Ni vertical heterostructures are proposed for spintronics

Ni-Graphene-Ni vertical heterostructures are proposed for spintronics Green function formalism combined with density functional theory has been applied to quantum transport in Ni-Graphene-Ni vertical heterostructures where n graphene layers are sandwiched between two Ni electrodes. Magnetoresistance of 100% efficiency for n=5 junctions is expected to persist up to 0.4 V. This makes such devices promising for spin-torque-based device applications. Negative differential resistance is also predicted.
Source: ArXive

Ni-Graphene-Ni vertical heterostructures are proposed for spintronics

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