Nanogallery
Nanogallery
TODAY MARCH 21, 2019


The trench is further defined using hydrofluoric acid. The HF etc
The trench is further defined using hydrofluoric acid. The HF etches the SiO2 layer much more quickly than the top layer of SiN, resulting in an under-etched trench.

The substrate is then rinsed in a photoresist developer solution, in which all parts of the photoresist exposed to light are removed
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Nanohedron
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Biomolecules
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