Nanogallery
Nanogallery
TODAY FEBRUARY 27, 2020


The trench is further defined using hydrofluoric acid. The HF etc
The trench is further defined using hydrofluoric acid. The HF etches the SiO2 layer much more quickly than the top layer of SiN, resulting in an under-etched trench.

An optical mask is aligned over the substrate and the sample is exposed to UV light. The mask is designed to isolate a single nanotube and simultaneously create an electrode pattern for later measurements.
Nanowerk Nanotechnology Portal
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Nanohedron
http://www.nanohedron.com

Biomolecules
http://perso.curie.fr/Simon.Sc..


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